infrared led chip gaas/gaas 1. material substrate gaas (n type) epitaxial layer gaas (p/n type) 2. electrode n(cathode) side gold alloy p(anode) side aluminum alloy 3. electro-optical parameter min typ max unit condition characteristics f orward voltag e 1.3 1.45 v if=20ma reverse voltag e 8v ir=10ua a 1.14 b 1.22 c 1.30 d 1.38 e 1.46 f 1.54 940 nm if=20ma 45 nm if=20ma note : led chip is mounted on to-18 gold header without resin coat i 4. mechanical data (a) emission area ---------------------------- - 9mil x 9mil (b) bottom area ---------------------------- - 10mil x 10mil (c) bonding pad ---------------------------- - 130um (d) chip thickness ------------------------------- 10mil (e) junction height ------------------------------- 6.5mil epi epi p n p side electrode n side electrode eoyang factory,513-5 eoyang-dong, iksan, 570-210, korea tel. +82 63 839 1111 fax. +82 63 835 8259 www.auk.co.kr auk corp. power OPA9425AL v r v f symbol if=20ma mw p o wavelength ? p (e) (d) substrate (c) (a) (b)
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